**Job Description**
A postdoctoral position is available at the Microwave Electronics Lab, Department of Microtechnology and Nanoscience, focusing on GaN device characterization and modeling for RF/microwave power amplifiers. This role involves advanced device measurements, empirical modeling, and power amplifier design, contributing to next-generation transistor and amplifier technologies for 6G wireless communication and defense systems. The project is a collaboration with leading industrial partners and offers opportunities to work in state-of-the-art labs, strengthening the researcher’s profile through high-impact publications and technological advancement.
**Skills & Abilities**
• Strong background in one or more of: device modeling, transistor characterization, RF measurement techniques, or power amplifier design.
• Excellent communication skills in English.
• Ability to work effectively in a collaborative academic-industrial environment.
• Accustomed to teaching.
• Demonstrated good potential within research and education.
• Hands-on experience with on-wafer measurements such as S-parameters, pulsed I/V, or load-pull.
• Experience with RF power amplifier circuit design.
**Qualifications**
Required Degree(s) in:
• Microwave electronics
• Semiconductor device physics
• RF circuit design
**Experience**
Other:
• Doctoral degree awarded no more than three years prior to the application deadline (exceptions for documented circumstances like parental leave, sick leave, or military service may be made).
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